Manufacturer Part Number
NJVMJD340T4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single, NPN
Product Features and Performance
High Voltage (300V)
High Current Capability (500mA)
High Current Gain (hFE = 30 @ 50mA, 10V)
High Frequency (Ft = 10MHz)
Low Saturation Voltage (Vce = 1V @ 10mA, 100mA)
Wide Operating Temperature Range (-65°C to 150°C)
Automotive-qualified, AEC-Q101 compliant
Product Advantages
Suitable for high-voltage, high-current switching and amplifier applications
Robust design for harsh automotive environments
Compact DPAK surface mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 300V
Collector Current (max): 500mA
Collector Cutoff Current (max): 100μA
DC Current Gain (min): 30 @ 50mA, 10V
Transition Frequency: 10MHz
Power Dissipation: 1.56W
Operating Temperature Range: -65°C to 150°C
Quality and Safety Features
ROHS3 compliant
Automotive-grade, AEC-Q101 qualified
Compatibility
Suitable for various high-voltage, high-current switching and amplifier applications in automotive and industrial electronics
Application Areas
Automotive electronics (engine control, power management, etc.)
Industrial power electronics (inverters, converters, motor drives, etc.)
General-purpose high-voltage, high-current switching and amplifier circuits
Product Lifecycle
Currently in production
No plans for discontinuation, long-term availability expected
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Robust and reliable performance in harsh automotive environments
High voltage and current capabilities for demanding applications
Compact surface mount package for efficient board space utilization
Automotive-grade quality and safety compliance (AEC-Q101)
Proven design and long-term availability from a reputable manufacturer (onsemi)