Manufacturer Part Number
NJVMJD47T4G
Manufacturer
onsemi
Introduction
High-voltage, high-current NPN bipolar junction transistor (BJT) in a DPAK package.
Product Features and Performance
High voltage capability up to 250V
High current handling up to 1A
High DC current gain (hFE) of at least 30 at 300mA, 10V
High transition frequency of 10MHz
Surface mount DPAK package
Product Advantages
Robust high-voltage and high-current performance
Compact DPAK package for space-efficient designs
Suitable for a variety of high-power switching and amplification applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 250V
Collector Current (IC): 1A
Collector Cutoff Current (ICBO): 200μA
Collector-Emitter Saturation Voltage (VCE(sat)): 1V @ 200mA, 1A
DC Current Gain (hFE): Minimum 30 @ 300mA, 10V
Transition Frequency (fT): 10MHz
Quality and Safety Features
RoHS3 compliant
Reliable DPAK package
Compatibility
Compatible with a wide range of high-power electronic circuits and applications
Application Areas
High-power switching circuits
Power amplifiers
Motor controls
Industrial electronics
Automotive electronics
Product Lifecycle
This product is currently in production and available.
No known plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
Robust high-voltage and high-current performance
Compact DPAK package for space-efficient designs
Suitable for a variety of high-power switching and amplification applications
Reliable and RoHS3 compliant