Manufacturer Part Number
NJVMJB44H11T4G
Manufacturer
Fairchild (onsemi)
Introduction
High-power NPN bipolar junction transistor (BJT) in a DPAK package
Product Features and Performance
Designed for high-power switching and amplification applications
Capable of handling up to 2W of power dissipation
Wide operating voltage range up to 80V
High current handling capability up to 10A
Product Advantages
Reliable and robust performance
Efficient thermal management due to DPAK package
Suitable for a variety of high-power circuits and applications
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Power rating: 2W
Collector-Emitter breakdown voltage: 80V
Collector current (max): 10A
DC current gain (hFE): 40 min. @ 4A, 1V
Quality and Safety Features
Compliant with industry standards for reliability and safety
Rigorous quality control and testing procedures
Compatibility
Surface mount DPAK package compatible with various PCB designs
Application Areas
High-power switching circuits
Amplifier circuits
Motor control applications
Industrial power electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Robust and reliable performance for high-power applications
Wide operating voltage and current capabilities
Efficient thermal management in a compact DPAK package
Suitable for a variety of industrial and consumer electronics applications
Backed by the reputation and quality standards of Fairchild (onsemi)