Manufacturer Part Number
NJV4031NT1G
Manufacturer
onsemi
Introduction
High-performance NPN bipolar junction transistor (BJT) for general-purpose applications
Product Features and Performance
Operating temperature range: -55°C to 150°C
Power dissipation: 2W
Collector-emitter breakdown voltage: 40V
Collector current (max): 3A
Collector cutoff current (max): 100nA
Collector-emitter saturation voltage: 300mV @ 300mA, 3A
DC current gain (hFE): 200 min @ 1A, 1V
Transition frequency: 215MHz
Product Advantages
Reliable performance in a wide temperature range
High current handling capability
Low saturation voltage for efficient operation
Suitable for various general-purpose applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 40V
Current Collector (Ic) (Max): 3A
Current Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency Transition: 215MHz
Quality and Safety Features
RoHS3 compliant
Reliable performance in industrial temperature range
Compatibility
TO-261-4, TO-261AA package
Surface mount design
Application Areas
General-purpose electronics
Industrial control systems
Power supplies
Amplifier circuits
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
Reliable performance across wide temperature range
High current handling capability
Low saturation voltage for efficient operation
Suitable for various general-purpose applications
RoHS3 compliant for environmental safety
Surface mount design for easy integration