Manufacturer Part Number
CSD87313DMS
Manufacturer
Texas Instruments
Introduction
High-performance dual N-channel MOSFET for power management applications
Product Features and Performance
2 N-Channel (Dual) Common Drain configuration
30V Drain to Source Voltage (Vdss)
4290pF Input Capacitance (Ciss) @ 15V
25V Gate Threshold Voltage (Vgs(th)) @ 250uA
28nC Gate Charge (Qg) @ 4.5V
Product Advantages
Excellent thermal dissipation
High power density
Improved efficiency
Reduced board space
Key Technical Parameters
MOSFET (Metal Oxide) technology
Surface Mount (SMD) package
8-WSON (3.3x3.3) package size
-55°C to 150°C operating temperature range
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of power management applications
Application Areas
DC-DC converters
Voltage regulators
Motor drives
Power amplifiers
Product Lifecycle
Currently in active production, with no plans for discontinuation. Upgrades and replacements may be available in the future.
Several Key Reasons to Choose This Product
High-performance dual MOSFET design for efficient power management
Compact surface mount package for space-constrained applications
Excellent thermal characteristics for reliable operation
Wide operating temperature range to suit various environmental conditions
RoHS3 compliance for environmentally-friendly use
