Manufacturer Part Number
CSD86311W1723
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Array
Product Features and Performance
2 N-Channel (Dual) MOSFET Configuration
Drain to Source Voltage (Vdss): 25V
On-Resistance (Rds On): 39mOhm @ 2A, 8V
Continuous Drain Current (Id): 4.5A @ 25°C
Input Capacitance (Ciss): 585pF @ 12.5V
Gate Threshold Voltage (Vgs(th)): 1.4V @ 250A
Gate Charge (Qg): 4nC @ 4.5V
Product Advantages
Logic Level Gate
Low On-Resistance
High Current Handling
Surface Mount Package
Key Technical Parameters
MOSFET Technology
12-DSBGA Package
-55°C to 150°C Operating Temperature
5W Power Dissipation
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuits and systems
Application Areas
Suitable for power management, motor control, and other power electronics applications
Product Lifecycle
Current production part
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent performance characteristics (low Rds On, high current, low gate charge)
Compact surface mount package
Wide operating temperature range
Reliable and RoHS compliant