CSD86330Q3D - Texas Instruments

Manufacturer Part Number

CSD86330Q3D

Manufacturer

Texas Instruments

Introduction

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays

Product Features and Performance

2 N-Channel (Half Bridge) MOSFET

Drain to Source Voltage (Vdss) of 25V

RDS(on) of 9.6mOhm at 14A, 8V

Continuous Drain Current (ID) of 20A at 25°C

Input Capacitance (Ciss) of 920pF at 12.5V

Logic Level Gate with Vgs(th) of 2.1V at 250μA

Gate Charge (Qg) of 6.2nC at 4.5V

Operating Temperature Range of -55°C to 150°C

Power Dissipation of 6W

Product Advantages

Low RDS(on) for high efficiency

High current capability

Logic level gate for easy drive

Wide temperature range

Key Technical Parameters

Transistor Type: MOSFET (Metal Oxide)

Configuration: 2 N-Channel (Half Bridge)

Drain to Source Voltage (Vdss): 25V

RDS(on) (Max) @ Id, Vgs: 9.6mOhm @ 14A, 8V

Continuous Drain Current (ID) @ 25°C: 20A

Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 12.5V

Vgs(th) (Max) @ Id: 2.1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting Type

8-LSON (3.3x3.3) Package

Application Areas

Suitable for a wide range of power management and switching applications

Product Lifecycle

Currently available

No information on discontinuation or replacement

Several Key Reasons to Choose This Product

Low RDS(on) for high efficiency

High current capability up to 20A

Logic level gate for easy drive

Wide operating temperature range of -55°C to 150°C

Compact 8-LSON (3.3x3.3) package