Manufacturer Part Number
CSD87330Q3D
Manufacturer
Texas Instruments
Introduction
High-performance NexFET™ power MOSFET in an 8-pin PowerLDFN package
Product Features and Performance
30V N-channel MOSFET
Low on-resistance of 3.3mΩ
High current capability of 20A continuous drain current
Fast switching with 900pF input capacitance
Logic-level gate drive with 2.1V threshold voltage
8nC gate charge for efficient switching
Product Advantages
Excellent power density and efficiency
Compact 8-pin PowerLDFN package
Robust design for high-reliability applications
Optimized for high-frequency, high-current power conversion
Key Technical Parameters
Drain-source voltage (Vdss): 30V
Continuous drain current (Id): 20A
On-resistance (RDS(on)): 3.3mΩ
Input capacitance (Ciss): 900pF
Gate-source threshold voltage (Vgs(th)): 2.1V
Gate charge (Qg): 5.8nC
Quality and Safety Features
RoHS3 compliant
Designed for reliable operation from -55°C to 150°C
Compatibility
Suitable for a wide range of power conversion applications, including:
DC-DC converters
Motor drives
Power inverters
Industrial and automotive electronics
Application Areas
High-frequency, high-current power conversion
Efficient power management in industrial and automotive systems
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from Texas Instruments' latest NexFET portfolio.
Key Reasons to Choose This Product
Excellent power density and efficiency for compact, high-performance designs
Robust design for reliable operation in harsh environments
Optimized for high-frequency, high-current power conversion applications
Compatibility with a wide range of power conversion systems
Availability of replacement and upgrade options from the manufacturer
