Manufacturer Part Number
CSD87333Q3D
Manufacturer
Texas Instruments
Introduction
High-performance dual N-channel asymmetrical power MOSFET
Designed for efficient power conversion and control applications
Product Features and Performance
30V drain-to-source voltage rating
3mΩ maximum on-resistance at 4A and 8V
15A continuous drain current rating at 25°C
Low input capacitance of 662pF at 15V
Logic-level gate drive with 1.2V maximum threshold voltage
6nC maximum gate charge at 4.5V
Product Advantages
Excellent efficiency and power density for power conversion
Reduced switching losses and electromagnetic interference (EMI)
Enables smaller and lighter system designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (RDS(on)): 14.3mΩ
Continuous Drain Current (ID): 15A
Input Capacitance (Ciss): 662pF
Gate Threshold Voltage (Vgs(th)): 1.2V
Gate Charge (Qg): 4.6nC
Quality and Safety Features
RoHS3 compliant
8-VSON (3.3x3.3) package
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and power density for power conversion
Low on-resistance and switching losses for improved system performance
Compact 8-VSON package for space-constrained designs
Proven reliability and quality from Texas Instruments
Suitable for a wide range of power conversion and control applications
