Manufacturer Part Number
CSD87350Q5D
Manufacturer
Texas Instruments
Introduction
High-performance NexFET dual N-channel MOSFET in a compact 8-LSON (5x6) package
Product Features and Performance
40A continuous drain current
30V drain-to-source voltage
9mΩ maximum on-resistance
1770pF maximum input capacitance
9nC maximum gate charge
Logic-level gate threshold voltage
Product Advantages
Compact size with high power density
Low on-resistance for efficient power conversion
Excellent switching performance
Suitable for high-power, high-frequency applications
Key Technical Parameters
Package: 8-LSON (5x6)
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 5.9mΩ
Continuous Drain Current (Id): 40A
Input Capacitance (Ciss): 1770pF
Gate Charge (Qg): 10.9nC
Gate Threshold Voltage (Vgs(th)): 2.1V
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Surface mount package for high-density PCB designs
Application Areas
High-power, high-frequency power conversion applications
Server, telecom, and industrial power supplies
Electric vehicles and hybrid electric vehicles
Solar inverters and renewable energy systems
Product Lifecycle
Active and in production
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and thermal management
Compact size for space-constrained designs
Robust performance across wide temperature range
Reliable and RoHS-compliant for industrial applications
Proven NexFET technology from a trusted manufacturer
