Manufacturer Part Number
CSD87351Q5D
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
2 N-Channel (Dual) Configuration
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
High Power Handling Capability (Max 12W)
Wide Operating Temperature Range (-55°C to 150°C)
Low On-Resistance (7.6mOhm @ 20A, 8V)
High Continuous Drain Current (32A @ 25°C)
Low Input Capacitance (1255pF @ 15V)
Fast Switching Characteristics (7.7nC Gate Charge @ 4.5V)
Product Advantages
Efficient power handling
Wide temperature tolerance
Low on-resistance for reduced power loss
High current capability
Fast switching for high-frequency applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Continuous Drain Current (Id): 32A @ 25°C
On-Resistance (Rds(on)): 7.6mOhm @ 20A, 8V
Input Capacitance (Ciss): 1255pF @ 15V
Gate Charge (Qg): 7.7nC @ 4.5V
Gate Threshold Voltage (Vgs(th)): 2.1V @ 250A
Quality and Safety Features
RoHS3 Compliant
Surface Mount Mounting Type
Compatibility
Compatible with a wide range of electronic circuits and power systems
Application Areas
Suitable for high-power, high-frequency switching applications
Ideal for use in power supplies, motor drives, and other power electronics
Product Lifecycle
This product is currently in production and available for purchase
Replacements and upgrades may be available in the future as technology advances
Key Reasons to Choose This Product
Excellent power handling and efficiency
Wide operating temperature range for versatile applications
Low on-resistance for reduced power loss and improved system performance
High current capability for demanding applications
Fast switching characteristics for high-frequency operation
RoHS compliance for environmental responsibility
