Manufacturer Part Number
CSD87353Q5D
Manufacturer
Texas Instruments
Introduction
High-performance, high-power density half-bridge power MOSFET array
Designed for a wide range of power conversion applications
Product Features and Performance
30V MOSFET with 40A continuous drain current
Integrated 2 N-channel MOSFETs in a compact 8-LSON (5x6) package
Low input capacitance (3190pF) and gate charge (19nC)
Logic level gate with low threshold voltage (2.1V)
Supports operating temperatures from -55°C to 150°C
Product Advantages
Efficient power conversion with low conduction and switching losses
Compact, space-saving design
Easy to drive and integrate into power systems
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Continuous Drain Current (Id): 40A
Input Capacitance (Ciss): 3190pF
Gate Charge (Qg): 19nC
Gate Threshold Voltage (Vgs(th)): 2.1V
Quality and Safety Features
RoHS3 compliant
Robust and reliable performance
Compatibility
Suitable for a wide range of power conversion applications, including:
- Motor drives
- Switch-mode power supplies
- Power inverters
- DC-DC converters
Application Areas
Industrial
Automotive
Consumer electronics
Product Lifecycle
Current product offering
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High-performance, power-efficient MOSFET array
Compact, space-saving design
Easy to drive and integrate into power systems
Robust and reliable performance
Suitable for a wide range of power conversion applications
