Manufacturer Part Number
CSD87335Q3D
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Arrays
Product Features and Performance
ROHS3 Compliant
8-LSON (3.3x3.3) package
NexFET series
2 N-Channel (Dual) Asymmetrical configuration
MOSFET (Metal Oxide) technology
Operating Temperature: -55°C ~ 150°C (TJ)
Power Max: 6W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
Vgs(th) (Max) @ Id: 1.9V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Product Advantages
Compact 8-LSON (3.3x3.3) package
High power handling capability up to 6W
Wide operating temperature range of -55°C to 150°C
Efficient MOSFET technology
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss): 1050pF @ 15V
Threshold Voltage (Vgs(th)): 1.9V @ 250A
Gate Charge (Qg): 7.4nC @ 4.5V
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount
Application Areas
Suitable for a variety of power management and control applications
Product Lifecycle
The CSD87335Q3D is an active product and there are no indications of it being near discontinuation.
Several Key Reasons to Choose This Product
Compact 8-LSON (3.3x3.3) package
High power handling capability up to 6W
Wide operating temperature range of -55°C to 150°C
Efficient MOSFET technology
ROHS3 Compliant
Suitable for a variety of power management and control applications
