CSD87313DMST - Texas Instruments

Manufacturer Part Number

CSD87313DMST

Manufacturer

Texas Instruments

Introduction

High-performance NexFET dual N-channel MOSFET with low on-resistance and high switching speed.

Product Features and Performance

Dual N-channel MOSFET in 8-WSON package

Low on-resistance of 2.6 mΩ (max) per channel

High switching speed with low gate charge of 28 nC (max)

Operating temperature range of -55°C to 150°C

Power rating of 2.7 W

Product Advantages

Excellent thermal management due to compact package

High power density and efficiency

Reliable performance in harsh environments

Key Technical Parameters

Drain-to-source voltage (Vdss): 30 V

Input capacitance (Ciss): 4290 pF (max) at 15 V

Threshold voltage (Vgs(th)): 1.2 V (max) at 250 A

Gate charge (Qg): 28 nC (max) at 4.5 V

Quality and Safety Features

RoHS3 compliant

Reliable and stable performance

Designed for high-reliability applications

Compatibility

Suitable for a wide range of power management and control applications

Application Areas

Power management circuits

Motor control

White goods and industrial applications

Product Lifecycle

Currently in production

No known discontinuation plans

Replacement or upgrade options available from Texas Instruments

Several Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

High switching speed for fast and responsive power control

Reliable and stable operation in harsh environments

Compact and space-saving package design

Compatibility with a wide range of power management and control applications