Manufacturer Part Number
CSD86350Q5DT
Manufacturer
Texas Instruments
Introduction
High-performance dual N-channel MOSFET in an 8-LSON (5x6) package for efficient power conversion applications
Product Features and Performance
Optimized for high-frequency, high-efficiency power conversion applications
Low on-resistance and fast switching speed
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal performance
Compact 8-LSON (5x6) package
RoHS-compliant and halogen-free
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 25V
On-Resistance (Rds(on)): 5mΩ @ 25A, 5V; 1.1mΩ @ 25A, 5V
Continuous Drain Current (Id): 40A @ 25°C
Input Capacitance (Ciss): 1870pF @ 12.5V; 4000pF @ 12.5V
Gate Threshold Voltage (Vgs(th)): 2.1V @ 250A; 1.6V @ 250A
Gate Charge (Qg): 10.7nC @ 4.5V; 25nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Halogen-free
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
High-frequency, high-efficiency power supplies
DC-DC converters
Inverters
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade options available from Texas Instruments
Key Reasons to Choose This Product
Excellent thermal performance and power density
Optimized for high-frequency, high-efficiency power conversion
Compact 8-LSON (5x6) package
Wide operating temperature range
Robust quality and safety features