CSD85312Q3E - Texas Instruments

Manufacturer Part Number

CSD85312Q3E

Manufacturer

Texas Instruments

Introduction

High-performance NexFET power MOSFET

Designed for high-efficiency power conversion applications

Product Features and Performance

2 N-Channel (Dual) Common Source configuration

20V Drain to Source Voltage (Vdss)

4mOhm Rds On (Max) @ 10A, 8V

39A Continuous Drain Current (Id) @ 25°C

2390pF Input Capacitance (Ciss) (Max) @ 10V

2nC Gate Charge (Qg) (Max) @ 4.5V

Logic Level Gate, 5V Drive

4V Vgs(th) (Max) @ 250A

Product Advantages

High efficiency power conversion

Low on-resistance

High current capability

Suitable for logic-level gate drive

Key Technical Parameters

MOSFET (Metal Oxide) technology

8-PowerVDFN package

Surface Mount mounting type

Operating temperature range: -55°C to 150°C

Quality and Safety Features

ROHS3 Compliant

Manufacturer's packaging: 8-VSON (3.3x3.3)

Compatibility

Compatible with a wide range of power conversion applications

Application Areas

Switch-mode power supplies

Motor drives

Power amplifiers

Industrial and automotive electronics

Product Lifecycle

Currently available

No known discontinuation plans

Replacements and upgrades may be available from Texas Instruments

Key Reasons to Choose This Product

High efficiency and low power loss

Excellent thermal performance

Reliable and robust design

Suitable for a variety of power conversion applications

Backed by the expertise of Texas Instruments