Manufacturer Part Number
CSD75208W1015
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
2 P-Channel (Dual) Common Source
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 68mOhm @ 1A, 4.5V
Technology: MOSFET (Metal Oxide)
Current Continuous Drain (Id) @ 25°C: 1.6A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Product Advantages
RoHS3 Compliant
Wide operating temperature range: -55°C ~ 150°C (TJ)
High power handling: 750mW
Key Technical Parameters
Package / Case: 6-UFBGA, DSBGA
Supplier Device Package: 6-DSBGA (1x1.5)
Series: NexFET
Package: Tape & Reel (TR)
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with a wide range of electronic devices and applications
Application Areas
Suitable for use in various electronic circuits and devices
Product Lifecycle
Current product, no information on discontinuation or replacements
Key Reasons to Choose This Product
Wide operating temperature range
High power handling capability
RoHS3 compliance for environmental safety
Compact, surface mount package
Suitable for a variety of electronic applications
