CSD86350Q5D - Texas Instruments

Manufacturer Part Number

CSD86350Q5D

Manufacturer

Texas Instruments

Introduction

High-performance, integrated power MOSFET in a compact package.

Product Features and Performance

2 N-Channel (Half Bridge) configuration

25V Drain to Source Voltage (Vdss)

6mOhm Rds On (Max) @ 20A, 8V

40A Continuous Drain Current (Id) @ 25°C

1870pF Input Capacitance (Ciss) (Max) @ 12.5V

7nC Gate Charge (Qg) (Max) @ 4.5V

Logic Level Gate (Vgs(th) (Max) @ 250A: 2.1V)

Wide operating temperature range: -55°C to 150°C (TJ)

Power rating: 13W

Product Advantages

Compact, integrated design

High power density

Low on-resistance for efficient power conversion

Wide operating temperature range

Key Technical Parameters

Drain to Source Voltage (Vdss): 25V

Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 8V

Continuous Drain Current (Id) @ 25°C: 40A

Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V

Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V

Vgs(th) (Max) @ Id: 2.1V @ 250A

Quality and Safety Features

RoHS3 Compliant

MOSFET (Metal Oxide) technology

Compatibility

Surface mount package: 8-PowerLDFN

Application Areas

Power conversion and control

Motor drives

Switching power supplies

Industrial and consumer electronics

Product Lifecycle

Currently available

No known plans for discontinuation

Replacement or upgrade options may be available

Key Reasons to Choose This Product

High power density and efficiency

Wide operating temperature range

Compact, integrated design

Robust MOSFET technology

Suitable for a variety of power conversion and control applications