Manufacturer Part Number
CSD86360Q5D
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
ROHS3 Compliant
8-LSON (5x6) package
NexFET series
2 N-Channel (Half Bridge) configuration
MOSFET (Metal Oxide) technology
Logic Level Gate
Surface Mount
Key Technical Parameters
Operating Temperature: -55°C ~ 150°C (TJ)
Power Max: 13W
Drain to Source Voltage (Vdss): 25V
Current Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 12.5
Vgs(th) (Max) @ Id: 2.1V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Product Advantages
Compact 8-LSON (5x6) package
Excellent thermal performance
High power density
Reliable MOSFET technology
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount
Application Areas
Power management
Motor control
Industrial automation
Consumer electronics
Product Lifecycle
Current production, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose
High power density and efficiency
Compact package size
Reliable MOSFET technology
Wide operating temperature range
Meets ROHS3 compliance