Manufacturer Part Number
CSD25480F3
Manufacturer
Texas Instruments
Introduction
The CSD25480F3 is a P-channel MOSFET transistor from the FemtoFET series, designed for a wide range of power management and switching applications.
Product Features and Performance
Low on-resistance (Rds(on)) of 132 mΩ @ 400 mA, 8 V
Continuous drain current (Id) of 1.7 A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 155 pF @ 10 V
Low gate charge (Qg) of 0.91 nC @ 4.5 V
Supports a wide range of gate drive voltages from 1.8 V to 8 V
Product Advantages
Excellent power efficiency due to low on-resistance
Compact package size for space-constrained designs
Versatile for various power management and switching applications
Robust thermal performance over a wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20 V
Gate-to-Source Voltage (Vgs): -12 V (max)
Threshold Voltage (Vgs(th)): 1.2 V @ 250 μA
Quality and Safety Features
RoHS3 compliant
3-PICOSTAR package for surface mount assembly
Compatibility
Compatible with a wide range of power management and switching applications.
Application Areas
Power supplies
Motor drives
Battery chargers
Portable electronics
Industrial control systems
Product Lifecycle
The CSD25480F3 is an actively supported product, and there are no plans for discontinuation. Replacement or upgrade options may be available from Texas Instruments' current MOSFET portfolio.
Several Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Compact package size for space-constrained designs
Wide operating temperature range for robust performance
Versatile gate drive voltage support for design flexibility
RoHS3 compliance for environmentally conscious applications