CSD25304W1015 - Texas Instruments

Manufacturer Part Number

CSD25304W1015

Manufacturer

Texas Instruments

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

ROHS3 Compliant

Surface Mount Mounting Type

P-Channel MOSFET

Operating Temperature: -55°C to 150°C

Drain to Source Voltage (Vdss): 20V

Vgs (Max): ±8V

Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V

Continuous Drain Current (Id) @ 25°C: 3A

Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V

Power Dissipation (Max): 750mW

Vgs(th) (Max) @ Id: 1.15V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V

Product Advantages

High performance MOSFET in a small package

Suitable for high frequency, high efficiency power conversion applications

Key Technical Parameters

MOSFET Technology

6-DSBGA (1x1.5) Package

Tape & Reel Packaging

Quality and Safety Features

ROHS3 Compliant

Compatibility

Compatible with a wide range of electronic systems and power conversion applications

Application Areas

Suitable for high frequency, high efficiency power conversion applications

Product Lifecycle

Currently available, no information on discontinuation or replacements

Several Key Reasons to Choose This Product

High performance MOSFET in a small package

Suitable for high frequency, high efficiency power conversion applications

ROHS3 compliant

Available in Tape & Reel packaging