CSD25211W1015 - Texas Instruments

Manufacturer Part Number

CSD25211W1015

Manufacturer

Texas Instruments

Introduction

High-performance p-channel NexFET MOSFET in a compact 6-DSBGA package

Product Features and Performance

Low on-resistance of 33 mOhm at 1.5 A, 4.5 V

Continuous drain current of 3.2 A at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 570 pF at 10 V

Maximum power dissipation of 1 W at 25°C

Product Advantages

Compact 6-DSBGA package

Efficient power management

Reliable performance across wide temperature range

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20 V

Gate-to-Source Voltage (Vgs): -6 V

Threshold Voltage (Vgs(th)): 1.1 V at 250 μA

Gate Charge (Qg): 4.1 nC at 4.5 V

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Compatible with a wide range of electronic systems and devices

Application Areas

Portable electronics

Power management circuits

Automotive electronics

Industrial control systems

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

Compact and space-saving package

Reliable operation across a wide temperature range

Suitable for high-reliability applications