CSD25304W1015T - Texas Instruments

Manufacturer Part Number

CSD25304W1015T

Manufacturer

Texas Instruments

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

ROHS3 Compliant

6-DSBGA (1x1.5) Package

NexFET Series

Tape & Reel Packaging

Operating Temperature: -55°C ~ 150°C

Drain to Source Voltage (Vdss): 20V

Vgs (Max): ±8V

Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V

MOSFET (Metal Oxide) Technology

Current Continuous Drain (Id) @ 25°C: 3A

Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V

Power Dissipation (Max): 750mW

P-Channel FET Type

Vgs(th) (Max) @ Id: 1.15V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V

Surface Mount Mounting Type

Product Advantages

RoHS3 Compliant

High performance NexFET technology

Small 6-DSBGA (1x1.5) package

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V

Current Continuous Drain (Id) @ 25°C: 3A

Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V

Power Dissipation (Max): 750mW

Quality and Safety Features

ROHS3 Compliant

Compatibility

Surface Mount

Application Areas

Suitable for a wide range of applications where high-performance, low-power dissipation P-Channel MOSFETs are required.

Product Lifecycle

Current product, no indication of discontinuation.

Key Reasons to Choose This Product

RoHS3 compliant

High performance NexFET technology

Small 6-DSBGA (1x1.5) package

Low Rds On and power dissipation

Wide operating temperature range (-55°C to 150°C)

Suitable for various applications requiring high-performance P-Channel MOSFETs.