Manufacturer Part Number
CSD25404Q3T
Manufacturer
Texas Instruments
Introduction
High performance P-Channel NexFET MOSFET
Product Features and Performance
High current capability up to 104A (Tc)
Low on-resistance down to 4.5mΩ
Fast switching speed
Low gate charge of 14.1nC
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal performance
Improved efficiency in power conversion
Compact and space-saving design
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±12V
Continuous Drain Current (Id): 104A (Tc)
On-Resistance (Rds(on)): 4.5mΩ @ 10A, 4.5V
Quality and Safety Features
ROHS3 compliant
Suitable for safety-critical applications
Compatibility
Wide compatibility with various power electronic systems and circuits
Application Areas
Switch-mode power supplies
Motor drives
DC-DC converters
Voltage regulators
Battery management systems
Product Lifecycle
Currently in active production
No plans for discontinuation, with availability of replacements and upgrades
Key Reasons to Choose
Exceptional current handling capability
Ultra-low on-resistance for high efficiency
Fast switching performance for improved power conversion
Robust design for reliable operation in harsh environments
Compact package for space-constrained applications