Manufacturer Part Number
CSD25484F4
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
P-Channel MOSFET
20V Drain to Source Voltage
-12V Gate to Source Voltage
94mOhm Rds On @ 500mA, 8V
5A Continuous Drain Current @ 25°C
230pF Input Capacitance @ 10V
500mW Power Dissipation
2V Threshold Voltage @ 250uA
42nC Gate Charge @ 4.5V
-55°C to 150°C Operating Temperature
Product Advantages
ROHS3 Compliant
Surface Mount Packaging
Tape & Reel Packaging
Key Technical Parameters
Drain to Source Voltage: 20V
Vgs (Max): -12V
Rds On (Max): 94mOhm
Drain Current: 2.5A
Input Capacitance: 230pF
Power Dissipation: 500mW
Threshold Voltage: 1.2V
Gate Charge: 1.42nC
Operating Temperature: -55°C to 150°C
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount
Application Areas
General Purpose
Product Lifecycle
Active product
Replacements/upgrades available
Key Reasons to Choose This Product
High performance P-Channel MOSFET
Low on-resistance
High current capability
Wide operating temperature range
Small surface mount package
ROHS3 compliant