CSD25481F4T - Texas Instruments

Manufacturer Part Number

CSD25481F4T

Manufacturer

Texas Instruments

Introduction

High-performance P-channel MOSFET with ultra-low on-resistance (Rds(on)) and small packaging

Product Features and Performance

P-channel MOSFET with ultra-low on-resistance (Rds(on))

Operates in a wide temperature range of -55°C to 150°C

Low input capacitance of 189 pF at 10 V

Capable of handling up to 2.5 A of continuous drain current at 25°C

Maximum power dissipation of 500 mW at 25°C

Product Advantages

Compact 3-PICOSTAR package for space-constrained applications

Excellent thermal performance

Low power consumption

High efficiency and reliability

Key Technical Parameters

Drain-to-source voltage (Vdss): 20 V

Gate-to-source voltage (Vgs max): -12 V

On-resistance (Rds(on) max): 88 mΩ at 500 mA, 8 V

Threshold voltage (Vgs(th) max): 1.2 V at 250 μA

Input capacitance (Ciss max): 189 pF at 10 V

Quality and Safety Features

RoHS 3 compliant

ESD protection

Compatibility

Suitable for a wide range of applications, including:

Power management circuits

Motor control

Battery-powered devices

Portable electronics

Application Areas

Power supplies

Battery chargers

LED drivers

DC-DC converters

Automotive electronics

Product Lifecycle

This product is currently in production and actively supported by Texas Instruments. Replacement or upgrade options may be available as technology evolves.

Several Key Reasons to Choose This Product

Excellent performance with ultra-low on-resistance (Rds(on)) for efficient power delivery

Compact 3-PICOSTAR package for space-constrained designs

Wide operating temperature range of -55°C to 150°C for reliable operation in harsh environments

Low input capacitance and gate charge for efficient switching

RoHS 3 compliance and ESD protection for quality and safety assurance