CSD25501F3T - Texas Instruments

Manufacturer Part Number

CSD25501F3T

Manufacturer

Texas Instruments

Introduction

This product is a discrete semiconductor device, specifically a P-channel MOSFET transistor.

Product Features and Performance

P-channel MOSFET transistor

Drain-to-Source Voltage (Vdss) of 20V

Maximum Gate-to-Source Voltage (Vgs) of -20V

On-State Resistance (Rds(on)) of 76mOhm at 400mA, 4.5V

Continuous Drain Current (Id) of 3.6A at 25°C

Input Capacitance (Ciss) of 385pF at 10V

Maximum Power Dissipation of 500mW at 25°C

Operating Temperature range of -55°C to 150°C

Product Advantages

Efficient power conversion and control

Small surface-mount package

Wide operating temperature range

Key Technical Parameters

MOSFET technology

3-LGA (0.73x0.64) package

Threshold Voltage (Vgs(th)) of 1.05V at 250μA

Gate Charge (Qg) of 1.33nC at 4.5V

Quality and Safety Features

RoHS3 compliant

Compatibility

Surface mount package

Compatible with a variety of electronic circuits and applications

Application Areas

Power management

Motor control

Switching circuits

General-purpose electronic applications

Product Lifecycle

Currently available

No information on discontinuation or replacement plans

Key Reasons to Choose This Product

Efficient power handling capabilities

Compact surface-mount package

Wide operating temperature range

RoHS3 compliance for environmental safety