CSD25485F5 - Texas Instruments

Manufacturer Part Number

CSD25485F5

Manufacturer

Texas Instruments

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

RoHS3 Compliant

3-PICOSTAR package

FemtoFET series

Tape & Reel (TR) packaging

Operating Temperature: -55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss): 20 V

Vgs (Max): -12V

Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V

MOSFET (Metal Oxide) technology

Current Continuous Drain (Id) @ 25°C: 3.2A (Ta)

Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V

Power Dissipation (Max): 500mW (Ta)

P-Channel FET Type

Vgs(th) (Max) @ Id: 1.3V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V

Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V

Surface Mount Mounting Type

Product Advantages

RoHS3 compliant

Wide operating temperature range

Low on-resistance

High current capability

Compact package

Key Technical Parameters

Drain to Source Voltage (Vdss): 20 V

Vgs (Max): -12V

Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V

Current Continuous Drain (Id) @ 25°C: 3.2A (Ta)

Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V

Power Dissipation (Max): 500mW (Ta)

Vgs(th) (Max) @ Id: 1.3V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V

Quality and Safety Features

RoHS3 compliant

Wide operating temperature range

Compatibility

Surface Mount Mounting Type

Application Areas

Suitable for a wide range of power management, switching, and control applications

Product Lifecycle

Current production, no discontinuation plans known

Several Key Reasons to Choose This Product

RoHS3 compliance for environmental responsibility

Wide operating temperature range for versatile applications

Low on-resistance for efficient power handling

High current capability for demanding applications

Compact package for space-constrained designs