Manufacturer Part Number
CSD25481F4
Manufacturer
Texas Instruments
Introduction
High-performance P-channel NexFET MOSFET
Product Features and Performance
20V drain-source voltage
88mΩ maximum on-resistance
5A continuous drain current at 25°C
500mW maximum power dissipation
Fast switching speed
Low gate charge
Product Advantages
Improved efficiency and thermal performance
Reduced power losses
Compact design
Key Technical Parameters
Vdss: 20V
Vgs (Max): -12V
Rds On (Max) @ Id, Vgs: 88mΩ @ 500mA, 8V
Id (Continuous) @ 25°C: 2.5A
Ciss (Max) @ Vds: 189pF @ 10V
Qg (Max) @ Vgs: 0.913nC @ 4.5V
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable performance and long lifespan
Compatibility
Suitable for various power management and switching applications
Application Areas
Power supplies
Motor drives
LED lighting
Battery management
Product Lifecycle
Currently in active production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Compact and space-saving design
Reliable and long-lasting operation
Suitable for a wide range of power management applications