CSD25401Q3 - Texas Instruments

Manufacturer Part Number

CSD25401Q3

Manufacturer

Texas Instruments

Introduction

High-performance P-channel MOSFET transistor for power management and control applications

Product Features and Performance

Low on-resistance for high efficiency

Fast switching speed

Robust and reliable design

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent thermal management

Optimized for high-frequency switching

Reliable performance in harsh environments

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Maximum Gate-to-Source Voltage (Vgs): ±12V

On-Resistance (Rds(on)): 11.7mΩ @ 10A, 4.5V

Continuous Drain Current (Id): 14A (Ta), 60A (Tc)

Input Capacitance (Ciss): 1400pF @ 10V

Power Dissipation (Max): 2.8W (Ta)

Quality and Safety Features

RoHS3 compliant

Sturdy 8-VSON-CLIP (3.3x3.3) package

Compatibility

Suitable for a wide range of power management and control applications

Application Areas

Switch-mode power supplies

Motor drives

Power amplifiers

Battery chargers

Product Lifecycle

Currently available, no discontinuation or replacement plans

Several Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

Fast switching speed for high-frequency applications

Robust design for reliable performance in harsh environments

Versatile compatibility for various power management and control needs