Manufacturer Part Number
CSD25302Q2
Manufacturer
Texas Instruments
Introduction
High-performance P-channel NexFET MOSFET for power management and high-efficiency power conversion applications
Product Features and Performance
Low On-Resistance (Rds(on)) for high efficiency
High-speed switching capability
Optimized charge profile for easy drive
Suitable for 12V and 24V systems
Automotive-qualified for reliability
Product Advantages
Excellent thermal resistance for improved power handling
Robust design for high reliability
Low gate charge for efficient switching
Wide operating temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 49mΩ @ 3A, 4.5V
Continuous Drain Current (Id): 5A @ 25°C
Input Capacitance (Ciss): 350pF @ 10V
Power Dissipation (Max): 2.4W
Quality and Safety Features
RoHS3 compliant
Automotive-qualified for reliable performance
Compatibility
Surface mount package (6-SON)
Tape and reel packaging
Application Areas
Power management
High-efficiency power conversion
Automotive electronics
Industrial control
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent efficiency and performance
Robust and reliable design
Easy to drive and integrate
Wide operating temperature range
Automotive-qualified for mission-critical applications