CSD25213W10 - Texas Instruments

Manufacturer Part Number

CSD25213W10

Manufacturer

Texas Instruments

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

RoHS3 Compliant

4-DSBGA (1x1) package

Surface Mount Mounting Type

NexFET Series

Tape & Reel (TR) packaging

Operating Temperature: -55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss): 20 V

Vgs (Max): -6V

Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V

MOSFET (Metal Oxide) Technology

Current Continuous Drain (Id) @ 25°C: 1.6A (Ta)

Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V

Power Dissipation (Max): 1W (Ta)

P-Channel FET Type

Vgs(th) (Max) @ Id: 1.1V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V

Product Advantages

Compact 4-DSBGA (1x1) package

Low on-resistance

High operating temperature range

Suitable for various applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 20 V

Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V

Current Continuous Drain (Id) @ 25°C: 1.6A (Ta)

Power Dissipation (Max): 1W (Ta)

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting Type

Application Areas

Suitable for various applications requiring discrete semiconductor products, such as power supplies, motor drives, and other electronic circuits.

Product Lifecycle

This product is currently available and actively supported by Texas Instruments.

Several Key Reasons to Choose This Product

Compact 4-DSBGA (1x1) package for space-constrained applications

Low on-resistance for improved efficiency

Wide operating temperature range of -55°C to 150°C

Suitable for various power management and control applications

Backed by Texas Instruments' reputation for quality and reliability