Manufacturer Part Number
CSD25301W1015
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
P-Channel MOSFET
20V Drain to Source Voltage
±8V Gate to Source Voltage
75mOhm On-Resistance @ 1A, 4.5V
2A Continuous Drain Current @ 25°C
270pF Input Capacitance @ 10V
5W Power Dissipation
Product Advantages
NexFET technology
Compact 6-DSBGA package
Wide operating temperature range (-55°C to 150°C)
Key Technical Parameters
MOSFET technology
6-UFBGA, DSBGA package
Tape & Reel (TR) packaging
1V Gate Threshold Voltage @ 250μA
5V to 4.5V Drive Voltage range
5nC Gate Charge @ 4.5V
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount design
Application Areas
Power management
Switching circuits
Motor control
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose
High efficiency NexFET technology
Small, compact package
Wide operating temperature range
Low on-resistance and gate charge
Suitable for various power management and switching applications