Manufacturer Part Number
CSD25404Q3
Manufacturer
Texas Instruments
Introduction
High-performance P-channel power MOSFET for power management applications
Product Features and Performance
Low on-resistance for high efficiency
High current capability
Fast switching speed
Low gate charge for efficient switching
Wide operating temperature range
Product Advantages
Excellent thermal performance
Robust design for reliable operation
Optimized for power conversion applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Vgs (Max): ±12V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V
Continuous Drain Current (Id) @ 25°C: 104A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10V
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
8-VSONP (3x3.15) package
Tape & Reel (TR) packaging
Application Areas
Power management
DC-DC conversion
Motor control
Lighting control
Industrial automation
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent thermal and electrical performance
Efficient switching characteristics
Robust design for reliable operation
Optimized for power conversion applications
Wide operating temperature range
RoHS3 compliance for environmental responsibility