CSD25483F4 - Texas Instruments

Manufacturer Part Number

CSD25483F4

Manufacturer

Texas Instruments

Introduction

Discrete Semiconductor Product

P-Channel MOSFET Transistor

Product Features and Performance

MOSFET (Metal Oxide) Technology

Low On-Resistance: 205 mOhm @ 500 mA, 8 V

Continuous Drain Current: 1.6 A @ 25°C

Wide Operating Temperature Range: -55°C to 150°C

Low Input Capacitance: 198 pF @ 10 V

Power Dissipation: 500 mW

Product Advantages

Efficient power switching

Compact 3-PICOSTAR package

Suitable for high-frequency applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20 V

Gate-to-Source Voltage (Vgs Max): -12 V

Threshold Voltage (Vgs(th) Max): 1.2 V @ 250 A

Gate Charge (Qg Max): 0.959 nC @ 4.5 V

Quality and Safety Features

RoHS3 Compliant

Suitable for Tape & Reel (TR) packaging

Compatibility

Compatible with a variety of electronic systems and applications

Application Areas

Power management circuits

Switching regulators

Motor drives

Amplifiers

Product Lifecycle

Current product offering

Replacements and upgrades may be available

Key Reasons to Choose This Product

Excellent power efficiency and switching performance

Compact and space-saving package

Wide operating temperature range

Reliable and RoHS-compliant design

Suitable for a variety of power management applications