Manufacturer Part Number
CSD25501F3
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
P-Channel MOSFET
Operating Temperature: -55°C ~ 150°C
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -20V
Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V
Current Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 10 V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1.05V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.33 nC @ 4.5 V
Product Advantages
High performance
Low on-resistance
Wide operating temperature range
Key Technical Parameters
Package: 3-XFLGA, 3-LGA (0.73x0.64)
Series: FemtoFET
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a variety of applications
Application Areas
Suitable for various electronic circuits and systems
Product Lifecycle
Active product
Replacement and upgrade options available
Several Key Reasons to Choose This Product
High performance and efficiency
Low on-resistance
Wide operating temperature range
Compact and surface mount package
RoHS compliance for environmental responsibility