Manufacturer Part Number
IXXH50N60C3D1
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device, specifically a single transistor in the IGBT (Insulated Gate Bipolar Transistor) category.
Product Features and Performance
GenX3 and XPT IGBT technology
600V, 100A IGBT with low on-state voltage
Fast switching with low switching losses
Reverse recovery time of 25 ns
Gate charge of 64 nC
Pulsed collector current up to 200A
Product Advantages
High power density and efficiency
Robust and reliable performance
Optimized for industrial and power conversion applications
Key Technical Parameters
Collector-Emitter Voltage (Vces): 600V
Collector Current (Ic): 100A continuous, 200A pulsed
On-state voltage (Vce(on)): 2.3V @ 15V, 36A
Operating Temperature: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
TO-247AD package with through-hole mounting
Compatibility
This IGBT is compatible with a wide range of industrial and power conversion applications.
Application Areas
Motor drives
Power inverters
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Solar power inverters
Product Lifecycle
This product is an active and readily available part from the manufacturer. No discontinuation or replacement information is provided.
Key Reasons to Choose This Product
High power density and efficiency
Robust and reliable performance
Fast switching with low losses
Optimized for industrial and power conversion applications
RoHS3 compliant and widely compatible