Manufacturer Part Number
STGB7H60DF
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistor IGBT Single
Product Features and Performance
Trench Field Stop IGBT
600V Collector-Emitter Breakdown Voltage
14A Collector Current
95V Collector-Emitter Saturation Voltage @ 15V, 7A
136ns Reverse Recovery Time
46nC Gate Charge
28A Pulsed Collector Current
99/100μJ Switching Energy (On/Off)
30/160ns Turn-On/Turn-Off Delay Time
Product Advantages
Optimized for high efficiency power conversion
Low conduction and switching losses
High current and voltage handling capability
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 14A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Reverse Recovery Time (trr): 136ns
Gate Charge: 46nC
Current Collector Pulsed (Icm): 28A
Switching Energy: 99/100μJ (On/Off)
Td (on/off) @ 25°C: 30/160ns
Quality and Safety Features
ROHS3 Compliant
Operating Temperature Range: -55°C to 175°C
Compatibility
Surface Mount (DPAK/TO-263) Package
Compatible with various power electronics applications
Application Areas
Power conversion
Motor drives
Inverters
Switched Mode Power Supplies (SMPS)
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose
High efficiency and low losses
High current and voltage handling
Optimized for power conversion applications
Reliable and robust design
Wide operating temperature range
Compatibility with common power electronics systems