Manufacturer Part Number
STGB5H60DF
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor IGBT
Product Features and Performance
Trench Field Stop IGBT
600V Collector-Emitter Breakdown Voltage
10A Collector Current
95V Collector-Emitter Saturation Voltage
5ns Reverse Recovery Time
43nC Gate Charge
20A Pulsed Collector Current
56μJ Turn-On Switching Energy, 78.5μJ Turn-Off Switching Energy
30ns Turn-On Delay, 140ns Turn-Off Delay
Product Advantages
Optimized for high-efficiency switching applications
Low conduction and switching losses
Fast switching capability
Key Technical Parameters
Operating Temperature: -55°C to 175°C
Power Rating: 88W
Packaging: DPAK (TO-263)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting
Application Areas
Switching Power Supplies
Motor Drives
Inverters
Welding Equipment
Induction Heating
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose
Optimized for high-efficiency switching
Low conduction and switching losses
Fast switching capability
Wide operating temperature range
Surface mount packaging