Manufacturer Part Number
STGB30M65DF2
Manufacturer
STMicroelectronics
Introduction
High-performance trench field-stop IGBT for high-power switching applications
Product Features and Performance
Trench field-stop IGBT design for high efficiency and fast switching
Low Vce(on) and low switching losses
Capable of handling up to 60A of continuous collector current
Voltage rating of up to 650V
Product Advantages
Efficient power conversion
Compact design
Reliable and robust performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 650V
Collector Current (max): 60A
Vce(on) (max): 2V @ 15V, 30A
Reverse Recovery Time: 140ns
Gate Charge: 80nC
Collector Current Pulsed (max): 120A
Quality and Safety Features
RoHS3 compliant
Designed for high-reliability applications
Compatibility
Standard IGBT input type
Compatible with typical IGBT gate drive circuitry
Application Areas
High-power switching applications
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Product Lifecycle
Currently in production
No known discontinuation plans
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Efficient power conversion with low losses
Robust and reliable performance
Compact and space-saving design
Suitable for a wide range of high-power switching applications