STGB20NB41LZT4 - STMicroelectronics

Manufacturer Part Number

STGB20NB41LZT4

Manufacturer

STMicroelectronics

Introduction

High-performance IGBT transistor designed for power conversion applications.

Product Features and Performance

High voltage rating up to 442V

High current handling capability up to 40A

Low on-state voltage drop of 2V at 20A

Fast switching with turn-on time of 1μs and turn-off time of 12.1μs

Low gate charge of 46nC

Wide operating temperature range of -55°C to 175°C

Product Advantages

Efficient power conversion with low conduction and switching losses

Compact design with small package size

Reliable and robust performance

Key Technical Parameters

Voltage: 442V max collector-emitter breakdown voltage

Current: 40A max collector current, 80A max pulsed collector current

Power: 200W max power dissipation

Switching Energy: 5mJ (on), 12.9mJ (off)

Switching Times: 1μs (on), 12.1μs (off)

Gate Charge: 46nC

Quality and Safety Features

RoHS3 compliant

D2PAK package for reliable surface mount assembly

Compatibility

Suitable for use in various power conversion applications, such as motor drives, power supplies, and industrial electronics.

Application Areas

Motor drives

Power supplies

Industrial electronics

Renewable energy systems

Product Lifecycle

The STGB20NB41LZT4 is an actively supported product from STMicroelectronics. Replacements and upgrades may be available in the future as technology evolves.

Key Reasons to Choose This Product

High-performance IGBT with excellent power handling and efficiency

Compact and reliable D2PAK package

Wide operating temperature range for diverse applications

RoHS3 compliance for environmental sustainability

Actively supported product with potential future upgrades