Manufacturer Part Number
STGB20M65DF2
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor IGBT (Insulated Gate Bipolar Transistor)
Product Features and Performance
Trench Field Stop IGBT structure
650V Collector-Emitter Breakdown Voltage
40A Collector Current (Maximum)
2V Collector-Emitter Saturation Voltage @ 15V Gate, 20A Collector
166ns Reverse Recovery Time
63nC Gate Charge
80A Pulsed Collector Current
140μJ Turn-On Switching Energy, 560μJ Turn-Off Switching Energy
26ns Turn-On Delay Time, 108ns Turn-Off Delay Time
Product Advantages
Optimized for high-frequency switching applications
Improved efficiency and reduced power losses
Compact D2PAK surface mount package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 40A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Reverse Recovery Time (trr): 166ns
Gate Charge: 63nC
Current Collector Pulsed (Icm): 80A
Switching Energy: 140μJ (on), 560μJ (off)
Td (on/off) @ 25°C: 26ns/108ns
Quality and Safety Features
RoHS3 Compliant
Designed for high reliability and safety
Compatibility
Compatible with standard IGBT gate drivers
Application Areas
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Lighting ballasts
Product Lifecycle
Currently in active production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance characteristics for high-frequency switching
Optimized efficiency and reduced power losses
Compact surface mount package for space-constrained designs
Proven reliability and safety features
Wide range of compatible applications