Manufacturer Part Number
STGB30V60DF
Manufacturer
STMicroelectronics
Introduction
High-power insulated-gate bipolar transistor (IGBT)
Designed for use in power electronics applications
Product Features and Performance
Trench field stop IGBT technology
Low conduction and switching losses
Fast switching speed
High current handling capability
Wide operating temperature range (-55°C to 175°C)
Product Advantages
Excellent efficiency and thermal performance
Reliable and robust design
Suitable for high-power, high-frequency applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 60 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Reverse Recovery Time (trr): 53 ns
Gate Charge: 163 nC
Current Collector Pulsed (Icm): 120 A
Switching Energy: 383J (on), 233J (off)
Td (on/off) @ 25°C: 45ns/189ns
Quality and Safety Features
RoHS3 compliant
Meets high reliability and safety standards
Compatibility
Surface mount package (D2PAK)
Suitable for a wide range of power electronics applications
Application Areas
Inverters
Converters
Motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Industrial automation and control
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
High efficiency and performance
Robust and reliable design
Wide operating temperature range
Suitable for high-power, high-frequency applications
Easy to integrate into various power electronics systems