Manufacturer Part Number
STGB20NB37LZT4
Manufacturer
STMicroelectronics
Introduction
High power IGBT transistor for industrial applications
Product Features and Performance
200W maximum power
425V maximum collector-emitter voltage
40A maximum collector current
2V maximum collector-emitter saturation voltage @ 4.5V gate voltage, 20A collector current
51nC gate charge
80A maximum pulsed collector current
3us/2us turn-on/turn-off time @ 25°C
Product Advantages
High power density
Low on-state voltage drop
Fast switching
Robust design
Key Technical Parameters
Power rating: 200W
Voltage rating: 425V
Current rating: 40A
Saturation voltage: 2V @ 4.5V, 20A
Gate charge: 51nC
Switching time: 2.3us/2us
Quality and Safety Features
ROHS3 compliant
D2PAK surface mount package
Compatibility
Compatible with industrial power electronics applications
Application Areas
Industrial motor drives
Power inverters
Welding equipment
Uninterruptible power supplies (UPS)
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose
High power handling capability
Low conduction losses
Fast switching for efficient operation
Robust package for industrial environments