Manufacturer Part Number
STGB19NC60KDT4
Manufacturer
STMicroelectronics
Introduction
High-performance IGBT transistor for power electronics applications
Product Features and Performance
600V Collector-Emitter Breakdown Voltage
35A Collector Current (Max)
75V Collector-Emitter Saturation Voltage @ 15V, 12A
31ns Reverse Recovery Time
55nC Gate Charge
125W Power Dissipation (Max)
-55°C to 150°C Operating Temperature Range
Product Advantages
Superior switching performance
Low conduction and switching losses
High reliability and robustness
Compact D2PAK surface mount package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 35A
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 12A
Reverse Recovery Time (trr): 31ns
Gate Charge: 55nC
Current Collector Pulsed (Icm): 75A
Switching Energy: 165mJ (on), 255mJ (off)
Td (on/off) @ 25°C: 30ns/105ns
Quality and Safety Features
RoHS3 compliant
D2PAK surface mount package for reliable operation
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
Current product offering, no indication of discontinuation
Several Key Reasons to Choose This Product
High efficiency and low losses for improved system performance
Compact surface mount package for space-constrained designs
Robust and reliable operation across wide temperature range
Optimized switching characteristics for fast, low-loss switching
RoHS compliance for environmentally-friendly applications
STGB19NC60HDSTMicroelectronics