STGB14NC60KDT4 - STMicroelectronics

Manufacturer Part Number

STGB14NC60KDT4

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Transistors IGBTs Single

Product Features and Performance

RoHS3 Compliant

D2PAK Packaging

PowerMESH Series

Tape & Reel (TR) Packaging

Operating Temperature: -55°C ~ 150°C (TJ)

Power Rating: 80 W

Voltage Rating: 600 V

Current Rating: 25 A

Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A

Reverse Recovery Time (trr): 37 ns

Gate Charge: 34.4 nC

Pulsed Collector Current (Icm): 50 A

Switching Energy: 82J (on), 155J (off)

Turn-on/off Delay Time (Td) @ 25°C: 22.5ns/116ns

Product Advantages

High power density

Fast switching speed

Low conduction loss

Compact D2PAK package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 600 V

Collector Current (Max): 25 A

Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A

Reverse Recovery Time (trr): 37 ns

Gate Charge: 34.4 nC

Pulsed Collector Current (Icm): 50 A

Switching Energy: 82J (on), 155J (off)

Turn-on/off Delay Time (Td) @ 25°C: 22.5ns/116ns

Quality and Safety Features

RoHS3 Compliant

Designed for high reliability and safety

Compatibility

Surface Mount Mounting Type

Suitable for a wide range of power electronic applications

Application Areas

Suitable for use in various power electronic applications, such as power supplies, motor drives, and inverters

Product Lifecycle

This product is an active and widely available IGBT from STMicroelectronics.

Key Reasons to Choose This Product

High power density and efficiency due to PowerMESH technology

Fast switching speed for high-frequency applications

Low conduction loss for reduced energy consumption

Compact D2PAK package for space-constrained designs

Proven reliability and safety features

Wide compatibility and suitability for various power electronic applications