Manufacturer Part Number
STGB10NC60HDT4
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
RoHS3 Compliant
TO-263-3, DPak (2 Leads + Tab), TO-263AB Package
Operating Temperature: -55°C ~ 150°C (TJ)
Power Rating: 65 W
Collector-Emitter Breakdown Voltage: 600 V
Collector Current: 20 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Reverse Recovery Time (trr): 22 ns
Gate Charge: 19.2 nC
Collector Pulsed Current: 30 A
Switching Energy: 31.8J (on), 95J (off)
Turn-on/off Delay Time @ 25°C: 14.2ns/72ns
Product Advantages
High power handling capacity
Fast switching performance
Low on-state voltage drop
Compact surface mount package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 20 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Reverse Recovery Time (trr): 22 ns
Gate Charge: 19.2 nC
Current Collector Pulsed (Icm): 30 A
Switching Energy: 31.8J (on), 95J (off)
Td (on/off) @ 25°C: 14.2ns/72ns
Quality and Safety Features
RoHS3 Compliant
D2PAK Packaging for Enhanced Thermal Performance and Reliability
Compatibility
Suitable for Surface Mount applications
Application Areas
Industrial and consumer power electronics
Motor drives
Switching power supplies
Inverters
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from STMicroelectronics
Key Reasons to Choose This Product
High power handling capacity up to 65W
Fast switching performance with low on-state voltage drop
Compact surface mount package for space-efficient designs
RoHS3 compliance for environmentally-friendly applications
Reliable and thermally-enhanced D2PAK packaging
Wide operating temperature range of -55°C to 150°C
Suitable for a variety of industrial and consumer power electronics applications
STGB10NB037LZSTMicroelectronics