Manufacturer Part Number
STGB10M65DF2
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor IGBT
Product Features and Performance
Trench Field Stop IGBT technology
High power density
Low conduction and switching losses
Excellent ruggedness and reliability
Product Advantages
Extended temperature range: -55°C to 175°C
High voltage capability: 650V
High current rating: 20A continuous, 40A pulsed
Low on-state voltage: 2V @ 15V, 10A
Fast switching: 19ns turn-on, 91ns turn-off
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 20A
Reverse Recovery Time (trr): 96ns
Gate Charge: 28nC
Switching Energy: 120J (on), 270J (off)
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for efficient heat dissipation
Compatibility
Surface mount package
Application Areas
Power conversion
Motor drives
Welding equipment
Renewable energy systems
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available from STMicroelectronics
Key Reasons to Choose This Product
Excellent power handling capabilities
High efficiency and reliability
Wide operating temperature range
Compact and thermally efficient package
Proven performance in a variety of power applications