Manufacturer Part Number
STGB10NB37LZT4
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor IGBT
Product Features and Performance
RoHS3 Compliant
D2PAK Packaging
PowerMESH Series
Tape & Reel Packaging
Operating Temperature: -65°C to 175°C
Power Rating: 125W
Collector-Emitter Breakdown Voltage (Max): 440V
Collector Current (Max): 20A
On-State Voltage (Max): 1.8V @ 4.5V, 10A
Gate Charge: 28nC
Pulsed Collector Current (Max): 40A
Switching Energy: 2.4mJ (on), 5mJ (off)
Turn-On/Off Delay Time: 1.3us/8us
Product Advantages
High voltage and current handling capability
Low on-state resistance
Fast switching speed
Robust design for reliable operation
Key Technical Parameters
Voltage, Current, Power, Switching Time
Quality and Safety Features
RoHS3 Compliant
Suitable for high-reliability applications
Compatibility
Compatible with standard IGBT gate drive circuits
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Solar inverters
Uninterruptible power supplies (UPS)
Product Lifecycle
Currently available
No planned discontinuation
Key Reasons to Choose
High performance for power electronic applications
Robust and reliable design
Suitable for a wide range of industrial uses
Backed by STMicroelectronics' quality and technical support