STGB10H60DF - STMicroelectronics

Manufacturer Part Number

STGB10H60DF

Manufacturer

STMicroelectronics

Introduction

High-performance single IGBT (Insulated Gate Bipolar Transistor) device

Product Features and Performance

Trench field stop IGBT technology

Low conduction losses

Fast switching

High current capability

Product Advantages

Efficient power conversion

Compact design

Reliable performance

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600 V

Current Collector (Ic) (Max): 20 A

Vce(on) (Max) @ Vge, Ic: 1.95 V @ 15 V, 10 A

Reverse Recovery Time (trr): 107 ns

Gate Charge: 57 nC

Current Collector Pulsed (Icm): 40 A

Switching Energy: 83 J (on), 140 J (off)

Td (on/off) @ 25°C: 19.5 ns/103 ns

Quality and Safety Features

ROHS3 compliant

Suitable for various industrial and consumer applications

Compatibility

Can be used in a wide range of power electronics circuits and systems

Application Areas

Power conversion

Motor drives

Inverters

Welding equipment

Induction heating

Industrial and consumer electronics

Product Lifecycle

Current product, no known discontinuation plans

Replacement or upgrade options may be available from the manufacturer

Key Reasons to Choose This Product

High efficiency and low losses

Fast switching capability

Robust and reliable performance

Compact and space-saving design

Compliance with industry standards

Broad application versatility